symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 48 62.5 c/w n-ch 74 110 c/w r jl n-ch 35 60 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r jl p-ch 35 40 c/w thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a 60 -60 20 drain-source voltage 20 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 6.3 5 40 2 1.28 -3.9 -4.9 2 1.28 a continuous drain current a t a =25c i d t a =70c pulsed drain current b r ja maximum junction-to-ambient a steady-state -30 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s ao4611 complementary enhancement mode field effect transistor features n-channel p-channel v ds (v) = 60v -60v i d = 6.3a (v gs =10v) -4.9a (v gs = -10v) r ds(on) r ds(on) < 25m ? (v gs =10v) < 42m ? (v gs = -10v) < 30m ? (v gs =4.5v) < 52m ? (v gs = -4.5v) general description the ao4611 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, and for a host of other applications. standard product ao4611 is pb-free (meets rohs & sony 259 specifications). AO4611L is a green product ordering option. ao4611 and AO4611L are electrically identical. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channel p-channel alpha & omega semiconductor, ltd.
ao4611 symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.1 3 v i d(on) 40 a 20 25 t j =125c 34 42 22 30 m ? g fs 27 s v sd 0.74 1 v i s 3a c iss 1920 2300 pf c oss 155 pf c rss 116 pf r g 0.65 0.8 ? q g (10v) 47.6 58 nc q g (4.5v) 24.2 30 nc q gs 6nc q gd 14.4 nc t d(on) 7.6 ns t r 5ns t d(off) 28.9 ns t f 5.5 ns t rr 33.2 40 ns q rr 43 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance i s =1a,v gs =0v v gs =10v, i d =6.3a diode forward voltage v gs =10v, v ds =30v, r l =4.7 ? , r gen =3 ? gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =30v, i d =6.3a r ds(on) static drain-source on-resistance forward transconductance m ? v gs =4.5v, i d =5.7a v ds =5v, i d =6.3a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v a gate-body leakage current v ds =0v, v gs = 20v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =48v, v gs =0v n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters maximum body-diode continuous current dynamic parameters body diode reverse recovery charge total gate charge i f =6.3a, di/dt=100a/ s turn-off delaytime turn-off fall time body diode reverse recovery time i f =6.3a, di/dt=100a/ s input capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev4: august 2005 alpha & omega semiconductor, ltd.
ao4611 typical electrical and thermal characteristics: n-channel 0 10 20 30 40 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 16 18 20 22 24 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v i d =5.7a 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6.3a 25c 125c i d =6.3a alpha & omega semiconductor, ltd.
ao4611 typical electrical and thermal characteristics: n-channel 0 2 4 6 8 10 0 1020304050 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0 .1 s 1 s 10s d c t j(max) =150c t a =25c r ds(on) limited v ds =30v i d =6.3a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
ao4611 symbol min typ max units bv dss -60 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -1.9 -3 v i d(on) -30 a 34 42 t j =125c 58 72 42 52 m ? g fs 17.8 s v sd -0.73 -1 v i s -3 a c iss 2417 2900 pf c oss 179 pf c rss 120 pf r g 1.9 2.3 ? q g (10v) 45.2 55 nc q g (4.5v) 22.8 28 nc q gs 5.8 nc q gd 9.6 nc t d(on) 9.8 ns t r 6.1 ns t d(off) 44 ns t f 12.7 ns t rr 32 42 ns q rr 42 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. rev4: august 2005 p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-48v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v m ? v gs =-4.5v, i d =-4.4a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v v ds =-5v, i d =-4.9a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-4.9a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-30v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-30v, i d =-4.9a turn-on delaytime v gs =-10v, v ds =-30v, r l =6.2 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-4.9a, di/dt=100a/ s body diode reverse recovery charge i f =-4.9a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in anyven application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev4: august 2005 a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
ao4611 typical electrical and thermal characteristics: p-channel 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2.5v -6v -3.5v -4v -10v -3v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 30 35 40 45 50 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 20 30 40 50 60 70 80 90 100 2345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-4.9a 25c 125c i d =-4.9a i d =-4.4a alpha & omega semiconductor, ltd.
ao4611 typical electrical and thermal characteristics: p-channel 0 2 4 6 8 10 0 1020304050 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 102030405060 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s d c r ds(on) limited t j( m a x ) =150c, t a =25c v ds =-30v i d =-4.9a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
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